IRF200B211
- Manufacturer Infineon Technologies
- Part Number IRF200B211
- Description MOSFET TRENCH_MOSFETS
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 4.4 mm |
| Qg - Gate Charge | 15.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001561622 |
| Fall Time | 6.5 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.081130 oz |
| Number of Channels | 1 Channel |
| Tradename | StrongIRFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 12 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 170 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 15.65 mm |
| Typical Turn-On Delay Time | 6.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 80 W |
| Rise Time | 9.5 ns |
| Technology | Si |
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