IPU80R1K4P7AKMA1
- Manufacturer Infineon Technologies
- Part Number IPU80R1K4P7AKMA1
- Description MOSFET
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 2.38 mm |
| Qg - Gate Charge | 10 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | IPU80R1K4P7 SP001422742 |
| Fall Time | 20 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Tradename | CoolMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 4 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 1.4 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CoolMOS P7 |
| Height | 6.22 mm |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | - 50 C |
| Pd - Power Dissipation | 32 W |
| Rise Time | 8 ns |
| Technology | Si |
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