IPT020N10N3
- Manufacturer Infineon Technologies
- Part Number IPT020N10N3
- Description MOSFET MV POWER MOS
- Category MOSFET
Specifications
| Package | HSOF-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 10.1 mm |
| Qg - Gate Charge | 156 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | IPT020N10N3ATMA1 SP001100160 |
| Fall Time | 18 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.002293 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 125 S |
| Id - Continuous Drain Current | 300 A |
| Length | 10.58 mm |
| Rds On - Drain-Source Resistance | 2 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 84 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Height | 2.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 34 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Rise Time | 58 ns |
| Technology | Si |
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