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IPP120N04S3-02

  • Manufacturer Infineon Technologies
  • Part Number IPP120N04S3-02
  • Description MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T
  • Category MOSFET
Specifications
Package TO-220-3
Packaging Tube
Min. Pack 500
Vds - Drain-Source Breakdown Voltage 40 V
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 2.3 mOhms
Width 4.4 mm
Vgs - Gate-Source Voltage 20 V
Part # Aliases IPP120N04S302AKSA1 IPP12N4S32XK SP000261228
Fall Time 18 ns
Mounting Style Through Hole
Product Category MOSFET
Brand Infineon Technologies
Unit Weight 0.211644 oz
Number of Channels 1 Channel
Tradename OptiMOS
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Id - Continuous Drain Current 120 A
Length 10 mm
Qualification AEC-Q101
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 57 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series OptiMOS-T
Height 15.65 mm
Typical Turn-On Delay Time 35 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 300 W
Rise Time 19 ns
Technology Si

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