IPN70R1K0CEATMA1
- Manufacturer Infineon Technologies
- Part Number IPN70R1K0CEATMA1
- Description MOSFET
- Category MOSFET
Specifications
| Package | SOT-223-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 700 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 14.9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPN70R1K0CE SP001646912 |
| Fall Time | 13.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.004134 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.4 A |
| Rds On - Drain-Source Resistance | 900 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 41 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CoolMOS CE |
| Packaging | |
| Typical Turn-On Delay Time | 6.6 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 5 W |
| Rise Time | 5.2 ns |
| Technology | Si |
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