IPL65R165CFDAUMA1
- Manufacturer Infineon Technologies
- Part Number IPL65R165CFDAUMA1
- Description MOSFET HIGH POWER_LEGACY
- Category MOSFET
Specifications
| Package | VSON-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Width | 8 mm |
| Qg - Gate Charge | 86 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPL65R165CFD SP000949254 |
| Fall Time | 5.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | CoolMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 21.3 A |
| Length | 8 mm |
| Rds On - Drain-Source Resistance | 149 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 52.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CoolMOS CFDA |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12.4 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 195 W |
| Rise Time | 7.6 ns |
| Technology | Si |
Need pricing on IPL65R165CFDAUMA1?
Tell us your quantity and target price. We reply the same business day.