IPL60R125C7AUMA1
- Manufacturer Infineon Technologies
- Part Number IPL60R125C7AUMA1
- Description MOSFET HIGH POWER_NEW
- Category MOSFET
Specifications
| Package | VSON-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 8 mm |
| Qg - Gate Charge | 34 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPL60R125C7 SP001385066 |
| Fall Time | 4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | CoolMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 17 A |
| Length | 8 mm |
| Rds On - Drain-Source Resistance | 125 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CoolMOS C7 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 9.6 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 103 W |
| Rise Time | 4 ns |
| Technology | Si |
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