IPI200N25N3 G
- Manufacturer Infineon Technologies
- Part Number IPI200N25N3 G
- Description MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Transistor Polarity | N-Channel |
| Width | 4.5 mm |
| Qg - Gate Charge | 64 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Fall Time | 12 nS |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 64 A |
| Length | 10.2 mm |
| Rds On - Drain-Source Resistance | 20 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 nS |
| Subcategory | MOSFETs |
| Series | OptiMOS 3 |
| Height | 9.45 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 W |
| Rise Time | 20 nS |
| Technology | Si |
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