IPI020N06NAKSA1
- Manufacturer Infineon Technologies
- Part Number IPI020N06NAKSA1
- Description MOSFET N-Ch 60V 120A I2PAK-3
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V |
| Width | 4.5 mm |
| Qg - Gate Charge | 106 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPI020N06N IPI2N6NXK SP000962132 |
| Type | OptiMOS 3 Power-Transistor |
| Fall Time | 19 ns |
| Mounting Style | Through Hole |
| Product | OptiMOS Power |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.084199 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 210 S |
| Id - Continuous Drain Current | 120 A |
| Length | 10.2 mm |
| Rds On - Drain-Source Resistance | 2 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 51 ns |
| Subcategory | MOSFETs |
| Series | OptiMOS 5 |
| Height | 9.45 mm |
| Typical Turn-On Delay Time | 24 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 214 W |
| Rise Time | 45 ns |
| Technology | Si |
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