IPG20N06S4L-26A
- Manufacturer Infineon Technologies
- Part Number IPG20N06S4L-26A
- Description MOSFET N-Ch 55V 20A TDSON-8
- Category MOSFET
Specifications
| Package | PG-TDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 26 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5.15 mm |
| Qg - Gate Charge | 15 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | IPG20N06S4L26AATMA1 SP001023848 |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 2 Channel |
| Tradename | OptiMOS |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 20 A |
| Length | 5.9 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 18 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS-T2 |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 33 W |
| Rise Time | 1.5 ns |
| Technology | Si |
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