IPD80N04S3-06
- Manufacturer Infineon Technologies
- Part Number IPD80N04S3-06
- Description MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 6 mOhms |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPD80N04S306ATMA1 IPD8N4S36XT SP000261220 |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 80 A |
| Length | 6.5 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS-T |
| Height | 2.3 mm |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 W |
| Rise Time | 10 ns |
| Technology | Si |
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