IPD65R420CFDATMA2
- Manufacturer Infineon Technologies
- Part Number IPD65R420CFDATMA2
- Description MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 31.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPD65R420CFD |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | CoolMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 8.7 A |
| Rds On - Drain-Source Resistance | 420 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 38 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CFD2 |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 83.3 W |
| Rise Time | 7 ns |
| Technology | Si |
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