IPB049NE7N3 G
- Manufacturer Infineon Technologies
- Part Number IPB049NE7N3 G
- Description MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |
| Width | 9.25 mm |
| Qg - Gate Charge | 68 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | IPB049NE7N3GATMA1 IPB49NE7N3GXT SP000641752 |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 52 S |
| Id - Continuous Drain Current | 80 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 4.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Height | 4.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 11 ns |
| Technology | Si |
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