IMZ4T108
- Manufacturer ROHM Semiconductor
- Part Number IMZ4T108
- Description Bipolar Transistors - BJT NPN/PNP 32V 500MA
- Category Bipolar Transistors - BJT
Specifications
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.6 mm |
| Part # Aliases | IMZ4 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 560 |
| Collector- Emitter Voltage VCEO Max | 32 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Continuous Collector Current | 500 mA |
| Gain Bandwidth Product fT | 200 MHz, 250 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | IMZ4T |
| Height | 1.1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| DC Collector/Base Gain hfe Min | 120 |
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