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IMT17-7

  • Manufacturer Diodes Incorporated
  • Part Number IMT17-7
  • Description Bipolar Transistors - BJT 300mW -50Vceo
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-26-6
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 5 V
Width 1.6 mm
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Unit Weight 0.001058 oz
Collector- Emitter Voltage VCEO Max - 50 V
Configuration Dual
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 200 MHz
Length 3 mm
Maximum DC Collector Current - 500 mA
RoHS Y
Collector-Emitter Saturation Voltage - 600 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series IMT17
Height 1.1 mm
Packaging
Collector- Base Voltage VCBO - 60 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 300 mW
DC Collector/Base Gain hfe Min 120

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