IMH3AT110
- Manufacturer ROHM Semiconductor
- Part Number IMH3AT110
- Description Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-457
- Category Bipolar Transistors - Pre-Biased
Specifications
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.6 mm |
| Part # Aliases | IMH3A |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 600 |
| Unit Weight | 0.001235 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 2.9 mm |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | IMH3A |
| Height | 1.1 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| Typical Input Resistor | 4.7 kOhms |
| Brand | ROHM Semiconductor |
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