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IKW50N60H3

  • Manufacturer Infineon Technologies
  • Part Number IKW50N60H3
  • Description IGBT Transistors HIGH SPEED SWITCHING
  • Category IGBT Transistors
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 1
Gate-Emitter Leakage Current 100 nA
Continuous Collector Current Ic Max 50 A
Width 5.31 mm
Part # Aliases IKW50N60H3FKSA1 IKW5N6H3XK SP000852244
Mounting Style Through Hole
Continuous Collector Current at 25 C 100 A
Product Category IGBT Transistors
Brand Infineon Technologies
Unit Weight 1.340411 oz
Collector- Emitter Voltage VCEO Max 600 V
Tradename TRENCHSTOP
Configuration Single
Maximum Operating Temperature + 175 C
Length 15.87 mm
Maximum Gate Emitter Voltage 20 V
RoHS Y
Collector-Emitter Saturation Voltage 2.25 V
Product Type IGBT Transistors
Subcategory IGBTs
Series HighSpeed 3
Height 20.7 mm
Minimum Operating Temperature - 40 C
Pd - Power Dissipation 333 W
Technology Si

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