IKD10N60RATMA1
- Manufacturer Infineon Technologies
- Part Number IKD10N60RATMA1
- Description IGBT Transistors IGBT w/ INTG DIODE 600V 20A
- Category IGBT Transistors
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Part # Aliases | |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 20 A |
| Product Category | IGBT Transistors |
| Brand | Infineon Technologies |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Tradename | TRENCHSTOP |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.65 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | RC |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 150 W |
| Technology | Si |
Need pricing on IKD10N60RATMA1?
Tell us your quantity and target price. We reply the same business day.