IKD10N60RAATMA2
- Manufacturer Infineon Technologies
- Part Number IKD10N60RAATMA2
- Description IGBT Transistors IGBT PRODUCTS
- Category IGBT Transistors
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Collector-Emitter Saturation Voltage | 1.65 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | RC |
| Maximum Operating Temperature | + 175 C |
| Brand | Infineon Technologies |
| Pd - Power Dissipation | 150 W |
| Continuous Collector Current at 25 C | 20 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | SMD/SMT |
| Tradename | TRENCHSTOP |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current | 100 nA |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Part # Aliases | IKD10N60RA SP001008648 |
| Configuration | Single |
| Technology | Si |
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