IKB40N65EF5ATMA1
- Manufacturer Infineon Technologies
- Part Number IKB40N65EF5ATMA1
- Description IGBT Transistors 40A 650V TRENCHSTOP 5 ultra fast F5 IGBT copacked with 40A Rapid 1 diode
- Category IGBT Transistors
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 74 A |
| Part # Aliases | |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 74 A |
| Product Category | IGBT Transistors |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | TRENCHSTOP 5 |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 250 W |
| Technology | Si |
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