IHW15N120E1XKSA1
- Manufacturer Infineon Technologies
- Part Number IHW15N120E1XKSA1
- Description IGBT Transistors IGBT PRODUCTS
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 30 A |
| Part # Aliases | IHW15N120E1 SP001391908 |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 30 A |
| Product Category | IGBT Transistors |
| Brand | Infineon Technologies |
| Unit Weight | 0.211644 oz |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 156 W |
| Technology | Si |
Need pricing on IHW15N120E1XKSA1?
Tell us your quantity and target price. We reply the same business day.