IGO60R070D1AUMA1
- Manufacturer Infineon Technologies
- Part Number IGO60R070D1AUMA1
- Description MOSFET 600V CoolGaN Power Transistor
- Category MOSFET
Specifications
| Package | PG-DSO-20 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 0.9 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 5.8 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | SP001300362 |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | CoolGaN |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 31 A |
| Rds On - Drain-Source Resistance | 70 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 13 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 7 ns |
| Technology | GaN |
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