IGB20N65S5ATMA1
- Manufacturer Infineon Technologies
- Part Number IGB20N65S5ATMA1
- Description IGBT Transistors IGBT PRODUCTS
- Category IGBT Transistors
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Packaging | |
| Collector-Emitter Saturation Voltage | 1.35 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 40 A |
| Maximum Operating Temperature | + 175 C |
| Brand | Infineon Technologies |
| Pd - Power Dissipation | 125 W |
| Continuous Collector Current at 25 C | 40 A |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Mounting Style | SMD/SMT |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Part # Aliases | IGB20N65S5 SP001502564 |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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