HN4B102J(TE85L,F)
- Manufacturer Toshiba
- Part Number HN4B102J(TE85L,F)
- Description Bipolar Transistors - BJT PWR TRANS SMV V=30V F=1MHZ
- Category Bipolar Transistors - BJT
Specifications
| Min. Pack | 1 |
| Continuous Collector Current | - 1.8 A, 2 A |
| Emitter- Base Voltage VEBO | - 7 V, 7 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN, PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Series | HN4B102 |
| Brand | Toshiba |
| DC Current Gain hFE Max | 500 |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | - 30 V, 30 V |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 30 V, 60 V |
| Minimum Operating Temperature | - 55 |
| Maximum DC Collector Current | - 8 A, 8 A |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| DC Collector/Base Gain hfe Min | 200 |
| RoHS | Y |
Need pricing on HN4B102J(TE85L,F)?
Tell us your quantity and target price. We reply the same business day.