HN4A06J(TE85L,F)
- Manufacturer Toshiba
- Part Number HN4A06J(TE85L,F)
- Description Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-25-5 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 700 |
| Unit Weight | 0.000494 oz |
| Collector- Emitter Voltage VCEO Max | - 120 V |
| Product Type | BJTs - Bipolar Transistors |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | - 100 mA |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Collector-Emitter Saturation Voltage | - 0.3 V |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | HN4A06 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 120 V |
| Pd - Power Dissipation | 300 mW |
| DC Collector/Base Gain hfe Min | 200 |
Need pricing on HN4A06J(TE85L,F)?
Tell us your quantity and target price. We reply the same business day.