HN1C03FU-B,LF
- Manufacturer Toshiba
- Part Number HN1C03FU-B,LF
- Description Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
- Category Bipolar Transistors - BJT
Specifications
| Package | US-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 25 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 1200 |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 30 MHz |
| Maximum DC Collector Current | 300 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 0.042 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | HN1C03 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 200 |
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