HN1B04FU-GR,LF
- Manufacturer Toshiba
- Part Number HN1B04FU-GR,LF
- Description Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 400 |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 125 C |
| Gain Bandwidth Product fT | 150 MHz, 120 MHz |
| Maximum DC Collector Current | 150 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 100 mV |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | HN1B04 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V, - 50 V |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 120 |
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