HGTP12N60C3D
- Manufacturer ON Semiconductor / Fairchild
- Part Number HGTP12N60C3D
- Description IGBT Transistors HGTP12N60C3D
- Category IGBT Transistors
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 100 nA |
| Continuous Collector Current Ic Max | 24 A |
| Width | 4.83 mm |
| Part # Aliases | HGTP12N60C3D_NL |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 24 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.063493 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 10.67 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 24 A |
| Collector-Emitter Saturation Voltage | 1.65 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | HGTP12N60C3D |
| Height | 9.4 mm |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 104 W |
| Technology | Si |
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