HGTG11N120CND
- Manufacturer ON Semiconductor / Fairchild
- Part Number HGTG11N120CND
- Description IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 250 nA |
| Continuous Collector Current Ic Max | 43 A |
| Width | 4.82 mm |
| Part # Aliases | HGTG11N120CND_NL |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 43 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.225401 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 15.87 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | E |
| Continuous Collector Current | 55 A |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | HGTG11N120CND |
| Height | 20.82 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 298 W |
| Technology | Si |
Need pricing on HGTG11N120CND?
Tell us your quantity and target price. We reply the same business day.