HGTD1N120BNS9A
- Manufacturer ON Semiconductor / Fairchild
- Part Number HGTD1N120BNS9A
- Description IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
- Category IGBT Transistors
Specifications
| Package | TO-252AA-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 250 nA |
| Continuous Collector Current Ic Max | 5.3 A |
| Width | 6.1 mm |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 5.3 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 6.6 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | E |
| Continuous Collector Current | 5.3 A |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | HGTD1N120BNS |
| Height | 2.3 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 60 W |
| Technology | Si |
Need pricing on HGTD1N120BNS9A?
Tell us your quantity and target price. We reply the same business day.