HGT1S10N120BNST
- Manufacturer ON Semiconductor / Fairchild
- Part Number HGT1S10N120BNST
- Description IGBT Transistors N-Channel IGBT NPT Series 1200V
- Category IGBT Transistors
Specifications
| Package | TO-263AB-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 250 nA |
| Continuous Collector Current Ic Max | 35 A |
| Width | 9.65 mm |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 35 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046296 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 10.67 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | E |
| Continuous Collector Current | 55 A |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | HGT1S10N120BNS |
| Height | 4.83 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 298 W |
| Technology | Si |
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