HFA3134IHZ96
- Manufacturer Renesas / Intersil
- Part Number HFA3134IHZ96
- Description RF Bipolar Transistors W/ANNEAL TXARRAY 2X NPN MATCHED INDE
- Category RF Bipolar Transistors
Specifications
| Package | SOT-23 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 4.5 V |
| Width | 1.6 mm |
| Moisture Sensitive | Yes |
| Type | RF Bipolar Small Signal |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 48 |
| DC Current Gain hFE Max | 48 at 10 mA at 2 V, 48 at 1 mA at 2 V, 48 at 0.1 mA at 2 V, 48 at 10 mA at 5 V, 48 at 1 mA at 5 V, 48 at 0.1 mA at 5 V |
| Unit Weight | 0.000635 oz |
| Collector- Emitter Voltage VCEO Max | 11 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | Bipolar |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.026 A |
| Operating Frequency | 8500 MHz (Typ) |
| RoHS | Y |
| Continuous Collector Current | 0.026 A |
| Gain Bandwidth Product fT | 8500 MHz (Typ) |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | HFA3134 |
| Height | 1.15 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 12 V |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
| Brand | Renesas / Intersil |
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