HFA3101BZ
- Manufacturer Renesas / Intersil
- Part Number HFA3101BZ
- Description RF Bipolar Transistors TXARRAY NPN GILBERT CELL 8W
- Category RF Bipolar Transistors
Specifications
| Package | SOIC-8 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5.5 V |
| Width | 4 mm (Max) |
| Type | RF Bipolar Small Signal |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 40 |
| DC Current Gain hFE Max | 40 at 10 mA at 3 V |
| Unit Weight | 0.002540 oz |
| Collector- Emitter Voltage VCEO Max | 8 V |
| Configuration | Hex |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | Bipolar |
| Length | 5 mm (Max) |
| Maximum DC Collector Current | 0.03 A |
| Operating Frequency | 10000 MHz (Typ) |
| RoHS | Y |
| Continuous Collector Current | 0.03 A |
| Gain Bandwidth Product fT | 10000 MHz (Typ) |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | HFA3101 |
| Height | 1.5 mm (Max) |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 12 V |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
| Brand | Renesas / Intersil |
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