HFA3096BZ96
- Manufacturer Renesas / Intersil
- Part Number HFA3096BZ96
- Description RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N
- Category RF Bipolar Transistors
Specifications
| Package | SOIC-Narrow-16 |
| Min. Pack | 1 |
| Transistor Polarity | NPN/PNP |
| Emitter- Base Voltage VEBO | 5.5 V |
| Width | 4 mm |
| Moisture Sensitive | Yes |
| Type | RF Bipolar Small Signal |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 40 |
| DC Current Gain hFE Max | 40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP |
| Unit Weight | 0.004938 oz |
| Collector- Emitter Voltage VCEO Max | 8 V |
| Configuration | Quint |
| Maximum Operating Temperature | + 125 C |
| Transistor Type | Bipolar |
| Length | 10 mm |
| Maximum DC Collector Current | 0.065 A |
| Operating Frequency | 8 GHz, 5.5 GHz |
| RoHS | Y |
| Continuous Collector Current | 0.065 A |
| Gain Bandwidth Product fT | 8000 MHz |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | HFA3096 |
| Height | 1.5 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 12 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
| Brand | Renesas / Intersil |
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