GT40QR21(STA1,E,D
- Manufacturer Toshiba
- Part Number GT40QR21(STA1,E,D
- Description IGBT Transistors LOW SATURATION/FAST SWITCHING
- Category IGBT Transistors
Specifications
| Package | TO-3PN-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | GT40QR21 |
| Continuous Collector Current Ic Max | 80 A |
| Maximum Operating Temperature | + 175 C |
| Brand | Toshiba |
| Pd - Power Dissipation | 230 W |
| Continuous Collector Current at 25 C | 40 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 25 V |
| Gate-Emitter Leakage Current | 100 nA |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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