GS66502B-E01-MR
- Manufacturer GaN Systems
- Part Number GS66502B-E01-MR
- Description MOSFET 650V Enhancement Mode Transistor
- Category MOSFET
Specifications
| Package | GaNPX-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Width | 5 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 1.5 nC |
| Vgs - Gate-Source Voltage | 7 V |
| Part # Aliases | GS66502B-E01-MR |
| Mounting Style | SMD/SMT |
| Product | MOSFET |
| Product Category | MOSFET |
| Brand | GaN Systems |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.5 A |
| Length | 6.6 mm |
| Rds On - Drain-Source Resistance | 200 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | GS6650x |
| Height | 0.51 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Technology | GaN |
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