GB100XCP12-227
- Manufacturer GeneSiC Semiconductor
- Part Number GB100XCP12-227
- Description IGBT Modules 1200V 100A SIC IGBT CoPak
- Category IGBT Modules
Specifications
| Package | SOT-227 |
| Packaging | Bulk |
| Min. Pack | 150 |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Carbide Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Product Type | IGBT Modules |
| Mounting Style | SMD/SMT |
| Series | GB100XCP12 |
| Brand | GeneSiC Semiconductor |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Unit Weight | 1.058219 oz |
| Maximum Gate Emitter Voltage | 20 V |
| Technology | SiC |
| Minimum Operating Temperature | - 40 C |
| Configuration | IGBT-Inverter |
| Maximum Operating Temperature | + 175 C |
| RoHS | Y |
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