GA04JT17-247
- Manufacturer GeneSiC Semiconductor
- Part Number GA04JT17-247
- Description MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 630 |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV |
| Transistor Polarity | N-Channel |
| Fall Time | 50 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | GeneSiC Semiconductor |
| Unit Weight | 0.225401 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 480 mOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 73 ns |
| Subcategory | MOSFETs |
| Series | GA04 |
| Typical Turn-On Delay Time | 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 91 W |
| Rise Time | 28 ns |
| Technology | SiC |
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