FS800R07A2E3_B31
- Manufacturer Infineon Technologies
- Part Number FS800R07A2E3_B31
- Description IGBT Modules HYBRID PACK 2
- Category IGBT Modules
Specifications
| Package | HybirdPack2 |
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Part # Aliases | FS800R07A2E3B31BOSA1 SP001064622 |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Brand | Infineon Technologies |
| Unit Weight | 0.010864 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 800 A |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.4 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1.5 kW |
| Technology | Si |
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