FQU10N20CTU
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQU10N20CTU
- Description MOSFET N-CH/200V/10A/QFET
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Width | 2.5 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQU10N20CTU_NL |
| Fall Time | 72 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.012102 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.8 A |
| Length | 6.8 mm |
| Rds On - Drain-Source Resistance | 360 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQU10N20C |
| Height | 6.3 mm |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 50 W |
| Rise Time | 92 ns |
| Technology | Si |
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