FQP12N60C
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQP12N60C
- Description MOSFET 600V N-Ch Q-FET advance C-Series
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 4.7 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Type | MOSFET |
| Fall Time | 90 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.063493 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 12 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 650 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 155 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQP12N60C |
| Height | 16.3 mm |
| Typical Turn-On Delay Time | 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 225 W |
| Rise Time | 85 ns |
| Technology | Si |
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