FQI4N90TU
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQI4N90TU
- Description MOSFET 900V N-Channel QFET
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Width | 4.83 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQI4N90TU_NL |
| Type | MOSFET |
| Fall Time | 40 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.073511 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 3.5 S |
| Id - Continuous Drain Current | 4.2 A |
| Length | 10.29 mm |
| Rds On - Drain-Source Resistance | 3.3 Ohms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQI4N90 |
| Height | 7.88 mm |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.13 W |
| Rise Time | 70 ns |
| Technology | Si |
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