FQD4P25TM-WS
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQD4P25TM-WS
- Description MOSFET 250V 3.1A 2.1Ohm P-Channel
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Transistor Polarity | P-Channel |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQD4P25TM_WS |
| Fall Time | 27 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 3.1 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 2.1 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 14 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQD4P25TM_WS |
| Height | 2.39 mm |
| Packaging | |
| Typical Turn-On Delay Time | 9.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 45 W |
| Rise Time | 60 ns |
| Technology | Si |
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