FQD3P50TM-F085
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQD3P50TM-F085
- Description MOSFET Trans MOS P-Ch 500V 2.1A 3-Pin 2+Tab
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 4.9 Ohms |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQD3P50TM_F085 |
| Type | Enhancement Mode Field Effect Transistor |
| Fall Time | 45 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 2.1 S |
| Id - Continuous Drain Current | 2.1 A |
| Length | 6.73 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 35 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQD3P50TM_F085 |
| Height | 2.39 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 56 ns |
| Technology | Si |
Need pricing on FQD3P50TM-F085?
Tell us your quantity and target price. We reply the same business day.