FQD2N60CTM-WS
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQD2N60CTM-WS
- Description MOSFET 600V 1.9A NCH MOSFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQD2N60CTM_WS |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1.9 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 4.7 Ohms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | FQD2N60C |
| Height | 2.39 mm |
| Packaging | |
| Technology | Si |
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