FQB8N90CTM
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQB8N90CTM
- Description MOSFET QFC 900V 1.9OHM D2PAK
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 9.65 mm |
| Qg - Gate Charge | 35 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 70 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046296 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 5.5 S |
| Id - Continuous Drain Current | 6.3 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQB8N90CTM |
| Height | 4.83 mm |
| Packaging | |
| Typical Turn-On Delay Time | 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 171 W |
| Rise Time | 110 ns |
| Technology | Si |
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