FQB8N60CTM
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQB8N60CTM
- Description MOSFET 600V N-Channel Adv Q-FET C-Series
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 9.65 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQB8N60CTM_NL |
| Type | MOSFET |
| Fall Time | 64.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046296 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8.7 S |
| Id - Continuous Drain Current | 7.5 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 81 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQB8N60C |
| Height | 4.83 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.13 W |
| Rise Time | 60.5 ns |
| Technology | Si |
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