FQA8N100C
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQA8N100C
- Description MOSFET 1000V N-Channe MOSFET
- Category MOSFET
Specifications
| Package | TO-3PN-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Width | 5 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Type | MOSFET |
| Fall Time | 80 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.225789 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 8 A |
| Length | 16.2 mm |
| Rds On - Drain-Source Resistance | 1.45 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 122 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQA8N100C |
| Height | 20.1 mm |
| Typical Turn-On Delay Time | 50 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 225 W |
| Rise Time | 95 ns |
| Technology | Si |
Need pricing on FQA8N100C?
Tell us your quantity and target price. We reply the same business day.