FQA6N90C-F109
- Manufacturer ON Semiconductor / Fairchild
- Part Number FQA6N90C-F109
- Description MOSFET 900V N-Ch Q-FET advance C-Series
- Category MOSFET
Specifications
| Package | TO-3PN-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Width | 5 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | FQA6N90C_F109 |
| Fall Time | 60 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.225789 oz |
| Number of Channels | 1 Channel |
| Tradename | QFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6 A |
| Length | 16.2 mm |
| Rds On - Drain-Source Resistance | 2.3 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FQA6N90C_F109 |
| Height | 20.1 mm |
| Typical Turn-On Delay Time | 35 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 198 W |
| Rise Time | 90 ns |
| Technology | Si |
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