FPF2G120BF07ASP
- Manufacturer ON Semiconductor / Fairchild
- Part Number FPF2G120BF07ASP
- Description IGBT Modules High Power Module
- Category IGBT Modules
Specifications
| Package | F2 |
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 2 uA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 1.587328 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 40 A |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Configuration | Triple |
| Subcategory | IGBTs |
| Series | FPF2G120BF07ASP |
| Mounting Style | Chassis Mount |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 156 W |
| Technology | Si |
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